Reliability of vapor-grown planar In/sub 0.53/Ga/sub 0.47/As/InP p-i-n photodiodes with very high failure activation energy

The authors measured the mean time to failure (MTTF) for a statistically significant population of planar In/sub 0.53/Ga/sub 0.47/As/InP heterostructure p-i-n photodetectors at several elevated temperatures. The probability for failure is fit to a log-normal distribution, with the result that the width of the failure distribution is σ = 0.55 +- 0.2, and is roughly independent of temperature. From the temperature dependence of the MTFF data, they find that the failure mechanism is thermally activated, with an activation energy of 1.5 +- 0.2 eV measured in the temperature range of 170 - 2500C. This extrapolates to a MTTF of less than 0.1 failure in 10/sup 9/ h (or < 0.1 FIT) at 700C, indicating that such devices are useful for systems requiring extremely high reliable components, even if operated at elevated temperatures for significant time periods. To the authors' knowledge, this activation energy is the highest value reported for In/sub 0.53/Ga/sub 0.47/As/InP photodetectors, and is significantly higher than the energies of -- 0.85 eV often suspected to these devices