Published October 1984
| Version v1
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Fast timing methods for semiconductor detectors. Revision
Description
This tutorial paper discusses the basic parameters which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01; 1 as DE85004895.
Files
Additional details
Publishing Information
- Imprint Pagination
- 22 p.
- Report number
- LBL--14145-Rev
Conference
- Title
- IEEE symposium on nuclear science.
- Dates
- 21-23 Oct 1981.
- Place
- San Francisco, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16061722
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMPLIFIERS; DIGITIZERS; FIELD EFFECT TRANSISTORS; NOISE; SEMICONDUCTOR DETECTORS; SURFACE BARRIER DETECTORS; TIMING PROPERTIES; TRIGGER CIRCUITS
- Descriptors DEC
- ELECTRONIC CIRCUITS; EQUIPMENT; MEASURING INSTRUMENTS; PULSE CIRCUITS; RADIATION DETECTORS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-811012--62-Rev.