Published October 1984 | Version v1
Report Restricted

Fast timing methods for semiconductor detectors. Revision

Description

This tutorial paper discusses the basic parameters which determine the accuracy of timing measurements and their effect in a practical application, specifically timing with thin-surface barrier detectors. The discussion focusses on properties of the detector, low-noise amplifiers, trigger circuits and time converters. New material presented in this paper includes bipolar transistor input stages with noise performance superior to currently available FETs, noiseless input terminations in sub-nanosecond preamplifiers and methods using transmission lines to couple the detector to remotely mounted preamplifiers. Trigger circuits are characterized in terms of effective rise time, equivalent input noise and residual jitter

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01; 1 as DE85004895.

Files

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Additional details

Publishing Information

Imprint Pagination
22 p.
Report number
LBL--14145-Rev

Conference

Title
IEEE symposium on nuclear science.
Dates
21-23 Oct 1981.
Place
San Francisco, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
16061722
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AMPLIFIERS; DIGITIZERS; FIELD EFFECT TRANSISTORS; NOISE; SEMICONDUCTOR DETECTORS; SURFACE BARRIER DETECTORS; TIMING PROPERTIES; TRIGGER CIRCUITS
Descriptors DEC
ELECTRONIC CIRCUITS; EQUIPMENT; MEASURING INSTRUMENTS; PULSE CIRCUITS; RADIATION DETECTORS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Secondary number(s)
CONF-811012--62-Rev.