Published February 1, 2020 | Version v1
Journal article

Physical Properties of Half-Heusler Antiferromagnet MnPtSn Single Crystal

  • 1. Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872 (China)
  • 2. Condensed Matter Physics and Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973 (United States)

Description

We report the growth of ternary half-Heusler MnPtSn single crystals and detailed study on its structural and physical properties. MnPtSn single crystal has a larger lattice parameter than that in polycrystal and it exhibits antiferromagnetism with transition temperature T N at about 215 K, distinctly different from the ferromagnetism of MnPtSn polycrystal. Hall resistivity measurement indicates that the dominant carriers are hole-type and the nearly temperature-independent carrier concentration reaches about 2.86 × 1022 cm−3 at 5 K. Moreover, the carrier mobility is also rather low (4.7 cm2⋅V−1s−1 at 5 K). The above results strongly suggest that the significant Mn/Sn anti-site defects, i.e., the content of Mn in MnPtSn single crystal, play a vital role on structural, magnetic and transport properties. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/37/2/027502

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
37
Journal Issue
2
Journal Page Range
[5 p.]
ISSN
0256-307X
CODEN
CPLEEU