Published December 2018 | Version v1
Journal article

WTe2 synthesis by tellurization of W precursors using isothermal close space vapor transport annealing

  • 1. Institut Jean Lamour, Universite de Lorraine, UMR 7198, Nancy (France)
  • 2. Physics Faculty, University of Havana, La Habana (Cuba)
  • 3. Grupo de Electronica y Semiconductores, Departamento de Fisica Aplicada, Universidad Autonoma de Madrid, Cantoblanco, Madrid (Spain)
  • 4. Departamento de Fisica Aplicada, Universidad Autonoma de Madrid, Cantoblanco, Madrid (Spain)

Description

The preparation of WTe2 by isothermal tellurium annealing of sputtered W or WO3 precursors is reported. X-ray diffraction, energy dispersive, and Raman spectroscopies confirm the presence of 1T and acute; WTe2 phase in the annealed films which are preferentially oriented with the [001] crystallographic direction normal to the surface. Atomic force microscopy images indicate noticeable morphology differences between thin samples tellurized from different precursors. Rounded small grains or small platelets are obtained when W and WO3 precursor are used, respectively. (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.201800425

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi A. Applications and Materials Science (Online)
Journal Volume
215
Journal Issue
23
Journal Page Range
p. 1-5
ISSN
1862-6319

Optional Information

Notes
With 4 figs., 1 tab.