Published February 2018 | Version v1
Journal article Metadata-only

ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors

Creators

  • 1. IMEM-CNR Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma (Italy)
  • 2. Dept. of Mathematical, Physical and Computer Sciences, Univ. of Parma, Parco Area delle Scienze 7/A, 43124 Parma (Italy)
  • 3. Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa (Italy)

Description

Highlights: • Epilayers of ε-Ga2O3 are employed for the first time as UV photodetectors. • Fabricated photoresistors are sensitive to UV (270 nm), stable and reliable. • Their properties compare well with those of the β polytype of Ga2O3. • Bandgap and deep levels are investigated by optical absorption/cathodoluminescence.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.matchemphys.2017.11.023

Additional details

Identifiers

DOI
10.1016/j.matchemphys.2017.11.023;
PII
S0254058417309021;

Publishing Information

Journal Title
Materials Chemistry and Physics
Journal Volume
205
Journal Page Range
p. 502-507
ISSN
0254-0584
CODEN
MCHPDR

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49096511
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL LATTICES; GALLIUM OXIDES; OXIDATION; PHOTODETECTORS; THIN FILMS
Descriptors DEC
CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; FILMS; GALLIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.