Published September 1981
| Version v1
Journal article
Auger recombination in p-type semiconductors with different effective masses of electrons and holes
Creators
- 1. Tomskij Gosudarstvennyj Univ. (USSR). Sibirskij Fiziko-Tekhnicheskij Inst.
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Особенности Оже-рекомбинации в полупроводниках п-типа проводимости с различными значениями эффективных масс электронов и дырок
Publishing Information
- Journal Title
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Volume
- 24
- Journal Issue
- 9
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 125-127
- ISSN
- 0021-3411
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 13681411
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- AUGER EFFECT; CADMIUM COMPOUNDS; CARRIER LIFETIME; CRYSTALS; EFFECTIVE MASS; ELECTRON MOBILITY; ELECTRONS; HOLE MOBILITY; LOW TEMPERATURE; MERCURY COMPOUNDS; MEV RANGE 01-10; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SOLID SOLUTIONS; TELLURIDES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CHALCOGENIDES; DISPERSIONS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HOMOGENEOUS MIXTURES; LEPTONS; LIFETIME; MASS; MEV RANGE; MIXTURES; MOBILITY; PARTICLE MOBILITY; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SOLUTIONS; TELLURIUM COMPOUNDS
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics Journal (USA).