Investigation of electrical properties of Ni/Crystal Violet (C25H30CIN3)/n-Si/Al diode as a function of temperature

Highlights: • In this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n-Si crystals. After, Al metal was coated on the one surface of crystals by thermal evaporation and crystal violet materials were coated on other surface of crystals with spin coating method. Lastly, Ni metal was coated on Crystal Violet by sputtering. After the fabrication process of diode, the current-voltage (I-V) and capacity-voltage (C-V) measurements of Ni/Crystal Violet/n-Si/Al Schottky type diode were taken for various temperatures. The some basic diode parameters such as ideality factor (n), barrier height (Φ_b) and series resistance (Rs) of Ni/Crystal Violet/n-Si/Al were calculated from I-V measurements using different methods (Thermionic Emission, Cheung and Norde functions). These values have been shown strong temperature dependence. Also, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of diode as a function of temperature. In this study, Crystal Violet material was used for interface layer of Schottky diode applications. Firtly, chemical cleaning process have been made for boron doped n-Si crystals. After, Al metal was coated on the one surface of crystals by thermal evaporation and crystal violet materials were coated on other surface of crystals with spin coating method (coating parameters; 800 rpm for 60 s). Lastly, Ni metal was coated on Crystal Violet by sputtering. So, we obtained the Ni/Crystal Violet/n-Si/Al Schottky type diode. After the fabrication process of diode, the current-voltage (I-V) and capacity-voltage (C-V) measurements of Ni/Crystal Violet/n-Si/Al Schottky type diode were taken for various temperatures. The some basic diode parameters such as ideality factor (n), barrier height (Φ_b) and series resistance (Rs) of Ni/Crystal Violet/n-Si/Al were calculated from I-V measurements using different methods (Thermionic Emission, Cheung and Norde functions). Also, diode parameters such as Fermi energy level, diffusion potential, carrier concentration and barrier height were calculated from the C-V measurements of diode as a function of temperature.