Published 1998 | Version v1
Journal article

Use of semiconductor detectors on the base of Si, GaAs and Cd Te in radiometry and spectrometry of nuclear irradiation

  • 1. Khar'kovskij fiziko-tekhnicheskij institut, Khar'kov (Ukraine)
  • 2. AO 'Khartron', Khar'kov (Ukraine)
  • 3. NIK 'Uskoritel', Khar'kov (Ukraine)

Description

Detecting blocks of α, β and γ-radiation were developed for exposure dose rate in the range 1mcRem/h...1000 Rem/h using Si, Cd Te and GaAs

Additional details

Additional titles

Original title (Russian)
Применение полупроводниковых детекторов на базе кремния, арсенида галлия и теллурида кадмия в радиометрии и спектрометрии ядерных излучений

Publishing Information

Journal Title
Voprosy Atomnoj Nauki i Tekhniki. Vakuum, Chistye Materialy, Sverkhprovodniki
Journal Volume
1
Journal Issue
2
Journal Page Range
p. 95-98
ISSN
1680-192X