Published September 1, 2017 | Version v1
Journal article

Tuning a zigzag SiC nanoribbon as a thermal spin current generator

  • 1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)
  • 2. School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009 (China)
  • 3. State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Laser Spectroscopy, Shanxi University, Taiyuan 030006 (China)

Description

Quantum transport and spin current in a zigzag SiC nanoribbon device under a thermal gradient are investigated theoretically within the framework of the Landauer–B ü ttiker formalism using a first-principles technique. It is found that the edge state transport channels can be turned off or kept open by specific edge doping, and different spin channels can be controlled separately. Interestingly, by replacing an edge C atom with a B atom and an edge Si atom with a P atom in the scattering region, a Seebeck thermopower with different signs for different spins and a finite conductance for both spins can be obtained in the linear response regime. The subsequent thermoelectric field drives electrons of different spin channels in opposite directions, which leads unambiguously to a spin current. More importantly, by tuning the chemical potential and working temperature, pure spin current can be achieved. This provides a promising two-dimensional candidate system for producing pure spin current via the spin-dependent Seebeck effect. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1583/aa74a2

Additional details

Identifiers

Publishing Information

Journal Title
2D Materials
Journal Volume
4
Journal Issue
3
Journal Page Range
[9 p.]
ISSN
2053-1583

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
50045285
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ATOMS; NANOSTRUCTURES; SCATTERING; SEEBECK EFFECT; SILICON CARBIDES; SPIN; TEMPERATURE GRADIENTS; TWO-DIMENSIONAL SYSTEMS
Descriptors DEC
ANGULAR MOMENTUM; CARBIDES; CARBON COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; PARTICLE PROPERTIES; SILICON COMPOUNDS