Epitaxial growth and investigation of GaP/GaP(As)N heterostructures on Si (100) 4⁰ substrates

This article demonstrates the phased creation of heterostructures containing GaPN and GaPAsN layers on Si substrates grown by molecular-beam epitaxy. A technique of preparing a silicon surface for epitaxial growth, the creation of a GaP initial layer, and optical studies of GaPN and GaPAsN layers are described. It is shown that high-quality GaP(As)N epitaxial layers can be created on Si substrates by molecular-beam epitaxy. (paper)