Electric charging influence in holograms of total internal reflection, recorded in a very thin chalcogenide film
- 1. Central Laboratory of Optical Storage and Processing of Information, Bulgarian Academy of Sciences, bl. 101, Acad G Bonchev Street, Sofia 1113 (Bulgaria)
- 2. Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, bl. 109, Acad G Bonchev Street, Sofia 1113 (Bulgaria)
- 3. Department of Experimental Physics, University of Plovdiv 'Paisii Hilendarski', 24 Tzar Assen Street, Plovdiv 4000 (Bulgaria)
Description
We report the results of electric field influence on holographic recording in very thin chalcogenide glass films. The total internal reflection prism recording technique (Stetson's scheme) is applied for holographic recording. The main advantage of this scheme is the possibility of holographic recording in micro- and nanometer thick photosensitive materials. In the present work, 30 nm, 50 nm and 1.0 µm thick films are used. In the 1.0 µm thick film two slanted gratings are simultaneously recorded. In this recording geometry only one reconstructed beam is observed. The corona charging influence on the diffraction efficiency of the recorded gratings is investigated. A negative voltage of 5 kV is applied to the corona electrode (needle) prior to the holographic recording. The observed diffraction efficiency of charged samples is always higher in comparison with uncharged samples. The reconstructed beam intensity is monitored with a red (635 nm) semiconductor laser. The possible reason is an additional refractive index modulation due to the increase in polarization, caused by the electric charging
Availability note (English)
Available from http://dx.doi.org/10.1088/2040-8978/12/12/124008Additional details
Identifiers
- DOI
- 10.1088/2040-8978/12/12/124008;
- PII
- S2040-8978(10)54884-5;
Publishing Information
- Journal Title
- Journal of Optics (Online)
- Journal Volume
- 12
- Journal Issue
- 12
- Journal Page Range
- [6 p.]
- ISSN
- 2040-8986
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45018991
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- DIFFRACTION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRODES; FILMS; GLASS; GRATINGS; HOLOGRAPHY; MONITORS; PHOTON BEAMS; REFLECTION; REFRACTIVE INDEX; SEMICONDUCTOR LASERS
- Descriptors DEC
- BEAMS; COHERENT SCATTERING; LASERS; MEASURING INSTRUMENTS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SCATTERING; SEMICONDUCTOR DEVICES; SOLID STATE LASERS