Published 1992
| Version v1
Miscellaneous
Channeling in Si/GeSi stressed superlattices grown by MLE method
Creators
Description
Short communication
Additional details
Additional titles
- Original title (Russian)
- Kanalirovanie v napryazhennykh sverkhreshetkakh Si/GeSi, vyrashchennykh metodom MLEh
Publishing Information
- Imprint Title
- Summaries of reports of the 22. Conference on physics of charged particle interaction with crystals
- Imprint Pagination
- 135 p.
- Journal Page Range
- p. 21.
- Report number
- INIS-SU--340/A
Conference
- Title
- 22. Conference on physics of charged particle interaction with crystals.
- Original Conference Title
- 22. Soveshchanie po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 25-27 May 1992.
- Place
- Moscow (Russian Federation).
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24034952
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CHANNELING; DISLOCATIONS; EPITAXY; GERMANIUM SILICIDES; SILICON; STRESS RELAXATION; SUPERLATTICES; THIN FILMS
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTS; FILMS; GERMANIUM COMPOUNDS; LINE DEFECTS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS
Optional Information
- Notes
- Imprint:Tezisy dokladov 22. Soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.