Effect of ion irradiation on surface morphology and superconductivity of BaFe2(As1−xPx)2 films
Creators
- 1. Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy)
- 2. Istituto Nazionale di Fisica Nucleare, Sezione di Torino, 10125 Torino (Italy)
- 3. Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603 (Japan)
Description
Highlights: • Epitaxial films of BaFe2(As,P)2 at optimal doping on MgO substrate have been irradiated by 250 MeV Au ions with different fluences. • Irradiation induces a partial relaxation of the in-plane tensile stress typical of the pristine films. • The residual resistivity increases less than linearly with fluence, tending to saturate; the overall increase is about 60%, but the critical temperature decreases by only 2%. • These results indicate that the substrate and the reduced dimensionality of the films (as compared to the case of single crystals) play an important role in their response to irradiation. - Abstract: We have irradiated epitaxial thin films of BaFe2(As1−xPx)2 with x ≃ 0.2 (optimal doping) with Au ions having an energy of 250 MeV. We have used two different fluences, Φ1 = 2.4 × 1011 cm−2 and Φ2 = 7.3 × 1011 cm−2, and we have studied the effects of irradiation on the surface morphology, on the resistivity and on the critical temperature. We have found that irradiation progressively destroys the very clear and interconnected growth terraces typical of the pristine surface, leading first to their smoothening – accompanied by the appearance of localized defects – and then to a completely disordered surface. The residual resistivity increases by almost 60%, but the critical temperature decreases very little (i.e. by about 2%) on going from the pristine film to the most irradiated one. The possible role of the substrate in these results is discussed.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2016.07.016Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2016.07.016;
- PII
- S0169-4332(16)31443-X;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 395
- Journal Page Range
- p. 9-15
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 4. conference on progress in applied surface, interface and thin film science and solar renewable energy news
- Acronym
- SURFINT-SREN IV
- Dates
- 23-26 Nov 2015
- Place
- Florence (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48077804
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ARSENIC COMPOUNDS; BARIUM COMPOUNDS; CRITICAL TEMPERATURE; DEFECTS; EPITAXY; GOLD IONS; IRON COMPOUNDS; IRRADIATION; MAGNESIUM OXIDES; MEV RANGE 100-1000; MONOCRYSTALS; PHOSPHORUS COMPOUNDS; RELAXATION; STRESSES; SUBSTRATES; SUPERCONDUCTIVITY; SUPERCONDUCTORS; SURFACES; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY RANGE; FILMS; IONS; MAGNESIUM COMPOUNDS; MEV RANGE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; TRANSITION TEMPERATURE
Optional Information
- Copyright
- Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.