Published October 10, 2011 | Version v1
Journal article Metadata-only

Temperature-dependent energy band gap variation in self-organized InAs quantum dots

Creators

  • 1. CEA/CNRS/UJF Joint Team ''Nanophysics and Semiconductors,'' Institut Neel-CNRS, BP 166, 25 rue des Martyrs, 38042 Grenoble Cedex 9 (France)
  • 2. Nanophotonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)

Description

We investigated the temperature-dependent variation of the photoluminescence emission energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski-Krastanov (SK) molecular beam epitaxy and migration-enhanced molecular beam epitaxy (MEMBE) and that of MEMBE InAs QDs in a symmetric and an asymmetric In0.2Ga0.8As/GaAs well. The temperature-dependent energy variation of each QD is analyzed in low and high temperature regions, including a sigmoidal behavior of conventional SK quantum dots with the well-known Varshni and semi-empirical Fan models.

Additional details

Identifiers

DOI
10.1063/1.3651492;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
99
Journal Issue
15
Journal Page Range
p. 151909-151909.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43116039
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ASYMMETRY; CRYSTAL GROWTH; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; VARIATIONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES

Optional Information

Notes
(c) 2011 American Institute of Physics