Investigation of adhesion levels in quartz by means of thermostimulation of current

Gamma radiation effect on quartz thermostimulated current (TSC) was studied. It was found that the concentration of adhesion levels depended on a grade of quartz and type of pretreatment. The adhesion levels in crystal and fused quartz determined by TSC method could be divided into four groups, defects of the some type corresponding to each of them. Mean values of adhession level parameters were determined for each type of levels. Strong anisotropy of electron mobility was notices in quartz crystals as well as the effect of ionized Al-centers on its value