Published November 2004
| Version v1
Journal article
Structural changes in nanocrystalline silicon deposited by rf-magnetron sputtering
Creators
- 1. Korea University, Division of Natural Science (Korea, Republic of)
- 2. Korea Basic Science Institute (Korea, Republic of)
Description
We have measured structural and optical properties for nanocrystalline silicon thin films deposited by rf-magnetron sputtering and characterized the microstructure of the films with the methods of scanning electron microscopy, X-ray diffraction, and Raman scattering. The measurements suggest that the level of reactive gases, leaving residue gas molecules that remain inactive for the crystal growth, affect the formation of nanocrystals. They also identify the columns microstructually appeared in the nanocrystalline silicon to the amorphous networks.
Additional details
Identifiers
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing (Print)
- Journal Volume
- 79
- Journal Issue
- 7
- Journal Page Range
- p. 1813-1817
- ISSN
- 0947-8396
- CODEN
- APAMFC
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54062865
- Subject category
- S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CRYSTAL GROWTH; DEPOSITS; GASES; MAGNETRONS; MICROSTRUCTURE; MOLECULES; NANOCRYSTALS; OPTICAL PROPERTIES; RAMAN EFFECT; SCANNING ELECTRON MICROSCOPY; SILICON; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELECTRON MICROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; FLUIDS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NANOSTRUCTURES; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2004 Springer-Verlag
- Notes
- www.springer.de