Nonstationary photoeffect in a high-resistivity pure highly biased metal-semiconductor and metal-insulator-semiconductor structures

Electric field and photocurrent relaxation in a pure strongly biased high-resistivity MISIM structure during illumination with monochromatic intrinsic light was investigated. Transport equations in diffusion-drift approximation and the Poisson equation were numerically solved. It was shown that under illumination switching on (off) an electric field in the structure monotonically tends to its stationary distribution. Electric field and photocurrent relaxation time under switching on approximately equals to the hole time tdr, determined with field Ee = V/d, and does not depend on illumination intensity Ii, absorption coefficient and tunnel transparency of the interface Tn,p. Restoration time of dark current and field distribution after illumination is switched off increases with increasing Ii and decreasing Tn,p, but remains of the order tdr