In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy ${\text{N}}_2^{+}$ Ion Implantation

An approach to solving the problem of the in situ bandgap determination in the extremely thin and chemically active nitride nanolayers fabricated in high vacuum on the n-GaAs surface has been suggested. The approach is based on measuring the interband transitions involving the quantum well states by the method of electron energy loss spectroscopy. The bandgap of the nitride layer formed on the GaAs surface by low-energy ${\text{N}}_2^{+}$ ion implantation was determined to be 0.2 eV less than that of GaAs, which evidenced for creation of the GaAsN dilute alloy on the GaAs surface.