Photon absorption in periodically regimented nanostructures

Calculations based on the Effective Mass Approach of the miniband structure in the conduction band, joint density of states and photon absorption coefficient for InAs quantum dots embedded into a GaAs matrix are presented. In our investigation we kept the same volume for the quantum dots (250 nm3) and the separation between quantum dots (3 nm) and changed the aspect ratio in order to determine its effects on the quantities. From the results we draw conclusions that could enlighten the physical processes about photon absorption in regimented nanostructures.