Very low temperature growth of ZnO thin films on Si substrates using the metalorganic chemical vapor deposition technique

We have deposited ZnO thin films on Si(100) substrates at low temperatures ranging from 25 to 300 .deg. C by using the metalorganic chemical vapor deposition (MOCVD) technique. The x-ray diffraction (XRD) analysis revealed that the c-axis orientation of the ZnO thin films increased with increasing growth temperature. We demonstrated that ZnO thin films can be grown at a low temperature of 100 .deg. C by using the MOCVD method. The room-temperature photoluminescence spectra of ZnO exhibited peaks in the violet region, as well as the ultraviolet region.