Facing targets type of high rate and low temperature sputtering method and its application to deposition of magnetic films

A high rate and low temperature sputtering system of new opposite target type was designed, and its performance characteristics were investigated. By this method, the γ electrons from the targets can be effectively used for the ionization of atmospheric gas and a high density plasma can be formed between both targets. The collision of fast γ electrons to a substrate arranged outside of the targets is suppressed, and the thin films of iron or nickel can be made at higher deposition rate than by the ordinary two-electrode sputtering method without serious temperature rise of the substrate. In this method, the impact on the substrate by high energy particles such as negative ions from the targets is small, and uniform films can be made over a wide area. The distribution of film thickness on the substrate can be obtained approximately by the cosine law. Practical opposite target type sputtering system with permanent magnets was designed and constructed. The performance characteristics were also investigated. (Kato, T.)