Growth, characterization and fabrication of n-WSe2 PEC solar cells
Creators
- 1. Sardar Patel Univ., Vallabh Vidyanagar (India). Dept. of Physics
Description
Single crystals of n-WSe2 have been grown by the chemical vapour transport (CVT) technique, using Br2, TeCl4, and SeCl4 as transporters. Crystal lattice parameters have been determined for all the crystals grown above with an X-ray diffractometer. The composition of the above crystals were examined by energy dispersive analysis of X-rays (EDAX). Optical and some electical transport measurements are carried out to judge the semiconducting nature of the as-grown crystals. Photoelectrochemical (PEC) solar cells were fabricated by using these crystals as photoelectrodes and platinum grid as counter electrode in an aqueous iodine/iodide solution. Some of the PEC cell parameters were determined. The results thus obtained have been discussed in detail. (author)
Additional details
Publishing Information
- Journal Title
- Crystal Research and Technology
- Journal Volume
- 24
- Journal Issue
- 12
- Series
- Cryst. Res. Technol.
- Journal Page Range
- 1215-1222
- ISSN
- 0232-1300
- CODEN
- CRTED
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 21042356
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CARRIER DENSITY; CHEMICAL COMPOSITION; CHEMICAL PREPARATION; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; EXPERIMENTAL DATA; HALL EFFECT; LATTICE PARAMETERS; MASS TRANSFER; MONOCRYSTALS; N-TYPE CONDUCTORS; PHOTOCHEMISTRY; SCREW DISLOCATIONS; SOLAR CELLS; STRUCTURAL CHEMICAL ANALYSIS; TEMPERATURE GRADIENTS; TUNGSTEN SELENIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; CHEMISTRY; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; DATA; DIFFRACTION; DIRECT ENERGY CONVERTERS; DISLOCATIONS; ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; EQUIPMENT; INFORMATION; LINE DEFECTS; MATERIALS; NUMERICAL DATA; PHYSICAL PROPERTIES; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SYNTHESIS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS