Published January 2010
| Version v1
Journal article
Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution
- 1. St. Petersburg State Polytechnical University (Russian Federation)
Description
The inherent inhomogeneity of potential on the doped-semiconductor surface during the formation of equilibrium diffusion distribution for an electroactive impurity in the space-charge layers is discussed. The characteristic random-potential values are determined in the case of nondegenerate surface electron gas. The dependence of these inhomogeneities on the surface and bulk parameters is shown.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 44
- Journal Issue
- 1
- Journal Page Range
- p. 41-44
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43040188
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEPLETION LAYER; DIFFUSION; DISTRIBUTION; DOPED MATERIALS; ELECTRON GAS; EQUILIBRIUM; IMPURITIES; POTENTIALS; SEMICONDUCTOR MATERIALS; SURFACES
- Descriptors DEC
- LAYERS; MATERIALS
Optional Information
- Copyright
- Copyright (c) 2010 Pleiades Publishing, Ltd.