Adiabatic stabilization of excitons in an intense terahertz laser

Calculation of near-infrared absorption and transient spectra in bulk semiconductors irradiated by an intense terahertz (THz) laser predicts that, the ionization rate of the ground-state exciton, probed through the dynamic Fano resonance effect may decrease with the increase of the THz laser intensity. This counterintuitive effect indicates the excitons are stabilized against the field ionization. The much lower Rydberg energy and 'atomic unit' of laser intensity for excitons and, in particular, the possibility of creating excitons from the 'vacuum state' in semiconductors allow observing the excitonic stabilization experimentally, in contrast to the case of atomic stabilization