Published February 1999 | Version v1
Journal article Metadata-only

Change of luminescent electric properties of light emitting diodes based on heterostructures InGaN/AlGaN/GaN at long duration operation

Creators

  • 1. Moskovskij Inst. Stali i Splavov, Moscow (Russian Federation)
  • 2. Moskovskij Gosudarstvennyj Univ. im. M. V. Lomonosova, Moscow (Russian Federation)

Description

Variations of luminescence spectra and of electric properties of InGaN/AlGaN/GaN heterostructure base light emitting diodes were studied under long-term operation. Blue and green light emitting diodes with InGaN single quantum holes were studied during 102-2 · 103 h under up to 80 mA currents. Increase of luminescence intensity under working currents (15 mA) at the first stage of aging (100-800 h) and slow decrease at the second one were detected. Models explaining two aging stages: Mg acceptor activation resulting from decomposition of Mg-H residual complexes and formation of N donor vacancies, were suggested

Abstract (Russian)

Исследованы изменения спектров люминесценции и электрических свойств светодиодов на основе гетероструктур InGaN/AlGaN/GaN в процессе длительной работы. Изучались голубые и зеленые светодиоды с одиночными квантовыми ямами InGaN в течение 102-2 · 103 ч при токах 80 mA. Обнаружено увеличение интенсивности люминесценции при рабочих токах (15 мА) на первой стадии старения (100-800 ч) и медленное падение - на второй. Предложены модели, объясняющие две стадии старения: активация акцепторов Mg вследствие разрушения остаточных комплексов Mg-H и образование донорных вакансий N

Additional details

Additional titles

Original title (Russian)
Изменения люминесцентных электрических свойств световодов ис гетероструктур InGaN/AlGaN/GaN при длительной работе

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
33
Journal Issue
2
Journal Page Range
p. 224-231
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
31036624
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
AGING; ALUMINIUM NITRIDES; CRYSTAL DEFECTS; CRYSTAL MODELS; EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; GALLIUM NITRIDES; INDIUM NITRIDES; LIGHT EMITTING DIODES; SERVICE LIFE
Descriptors DEC
ALUMINIUM COMPOUNDS; CRYSTAL STRUCTURE; CURRENTS; ELECTRICAL PROPERTIES; EMISSION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LIFETIME; LUMINESCENCE; MATHEMATICAL MODELS; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Notes
21 refs., 8 figs.