Thin epitaxial films of the Heusler compound Co2Cr0.6Fe0.4Al
Creators
- 1. Institut fuer Physik, Universitaet Mainz, Staudinger Weg 7, 55099 Mainz (Germany)
- 2. Institut fuer Anorganische und Analytische Chemie, Universitaet Mainz, Duesbergweg 10-14, 55099 Mainz (Germany)
Description
We prepared thin films of the Heusler compound Co2Cr0.6Fe0.4Al with the B2 structure on a-plane (112-bar 0) Al2O3 by sputtering. Films grown at high temperatures (T>=600-bar C) on Al2O3 are fully epitaxial with the (110) and (11-bar 0) planes of the film parallel to the (112-bar 0) and (0001) planes of the substrate, respectively. These epitaxial films possess a higher surface roughness than films grown at room temperature. The films show nearly rectangular hysteresis loops with coercive fields of the order of 10mT. Magnetooptical Kerr measurements show an in-plane anisotropy of the magnetization with the easy axis in {001} direction. Hall measurements show a strong anomalous Hall effect and a weak normal Hall voltage signalling the existence of a compensated Fermi surface
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2004.11.466;
- PII
- S0304-8853(04)01732-9;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 290-291
- Journal Page Range
- p. 1104-1107
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- Joint European magnetic symposia
- Acronym
- JEMS '04
- Dates
- 5-10 Sep 2004
- Place
- Dresden (Germany)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37024888
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM OXIDES; ANISOTROPY; CHROMIUM ALLOYS; COBALT ALLOYS; EPITAXY; FERMI LEVEL; HALL EFFECT; HYSTERESIS; IRON ALLOYS; MAGNETIZATION; ROUGHNESS; SPUTTERING; SURFACES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS
- Descriptors DEC
- ALLOYS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ENERGY LEVELS; FILMS; OXIDES; OXYGEN COMPOUNDS; SURFACE PROPERTIES; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.