Published April 2005 | Version v1
Journal article

Thin epitaxial films of the Heusler compound Co2Cr0.6Fe0.4Al

  • 1. Institut fuer Physik, Universitaet Mainz, Staudinger Weg 7, 55099 Mainz (Germany)
  • 2. Institut fuer Anorganische und Analytische Chemie, Universitaet Mainz, Duesbergweg 10-14, 55099 Mainz (Germany)

Description

We prepared thin films of the Heusler compound Co2Cr0.6Fe0.4Al with the B2 structure on a-plane (112-bar 0) Al2O3 by sputtering. Films grown at high temperatures (T>=600-bar C) on Al2O3 are fully epitaxial with the (110) and (11-bar 0) planes of the film parallel to the (112-bar 0) and (0001) planes of the substrate, respectively. These epitaxial films possess a higher surface roughness than films grown at room temperature. The films show nearly rectangular hysteresis loops with coercive fields of the order of 10mT. Magnetooptical Kerr measurements show an in-plane anisotropy of the magnetization with the easy axis in {001} direction. Hall measurements show a strong anomalous Hall effect and a weak normal Hall voltage signalling the existence of a compensated Fermi surface

Additional details

Identifiers

DOI
10.1016/j.jmmm.2004.11.466;
PII
S0304-8853(04)01732-9;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
290-291
Journal Page Range
p. 1104-1107
ISSN
0304-8853
CODEN
JMMMDC

Conference

Title
Joint European magnetic symposia
Acronym
JEMS '04
Dates
5-10 Sep 2004
Place
Dresden (Germany)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37024888
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM OXIDES; ANISOTROPY; CHROMIUM ALLOYS; COBALT ALLOYS; EPITAXY; FERMI LEVEL; HALL EFFECT; HYSTERESIS; IRON ALLOYS; MAGNETIZATION; ROUGHNESS; SPUTTERING; SURFACES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS
Descriptors DEC
ALLOYS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ENERGY LEVELS; FILMS; OXIDES; OXYGEN COMPOUNDS; SURFACE PROPERTIES; TEMPERATURE RANGE; TRANSITION ELEMENT ALLOYS

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.