Published February 2015 | Version v1
Journal article Metadata-only

Low-temperature technique of thin silicon ion implanted epitaxial detectors

Creators

  • 1. Warsaw University, Heavy Ion Laboratory, Warsaw (Poland)
  • 2. Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France)
  • 3. ''Horia Hulubei'' National Institute of Physics and Nuclear Engineering (IFIN-HH), Bucharest Magurele (Romania)
  • 4. Universita di Firenze, Sesto Fiorentino (Firenze) (Italy)
  • 5. INFN Firenze, Sesto Fiorentino (Italy)
  • 6. University of Warsaw, Institute of Experimental Physics, Warsaw (Poland)
  • 7. CEA et IN2P3-CNRS, GANIL, Caen-Cedex 05 (France)
  • 8. IN2P3-CNRS, Institut de Physique Nucleaire, Orsay-Cedex (France)
  • 9. INFN, Napoli (Italy)
  • 10. Universita di Napoli ''Federico II'', Dipartimento di Scienze Fisiche, Napoli (Italy)
  • 11. Universita di Bologna, Bologna (Italy)
  • 12. INFN, Bologna (Italy)
  • 13. Universita di Catania, LNS, Catania (Italy)
  • 14. INFN, Catania (Italy)
  • 15. INFN LNL Legnaro, Legnaro (Padova) (Italy)
  • 16. Jagiellonian University, Cracow (Poland)
  • 17. University of Silesia, Silesian University, Katowice (Poland)
  • 18. Institute of Electronic Materials Technology, Warsaw (Poland)
  • 19. Faculty of Physics, Warsaw University of Technology, Warsaw (Poland)
  • 20. Warsaw University of Technology, Faculty of Mechatronics, Institute of Mikromechanics and Photonics, Department of Design of Precision Devices, Warsaw (Poland)

Description

A new technique of large-area thin ion implanted silicon detectors has been developed within the R and D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (left angle Eα right angle = 5.5 MeV). Preliminary tests on the first thin detector (area ∼ 20 x 20 mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr (E = 35 A MeV) + 112Sn. The ΔE - E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1140/epja/i2015-15015-2

Additional details

Identifiers

DOI
10.1140/epja/i2015-15015-2;

Publishing Information

Journal Title
European Physical Journal. A
Journal Volume
51
Journal Issue
2
Journal Page Range
p. 1-6
ISSN
1434-6001

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
46041820
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BAKING; BORON IONS; ELECTRIC CONDUCTIVITY; ENERGY LOSSES; EPITAXY; HEAT TREATMENTS; INTEGRATED CIRCUITS; ION DETECTION; ION IMPLANTATION; PARTICLE IDENTIFICATION; P-TYPE CONDUCTORS; PULSE RISE TIME; SI SEMICONDUCTOR DETECTORS; SILICON; TEMPERATURE RANGE 0400-1000 K; THICKNESS
Descriptors DEC
CHARGED PARTICLE DETECTION; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; DETECTION; DIMENSIONS; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELEMENTS; HEATING; IONS; LOSSES; MATERIALS; MEASURING INSTRUMENTS; MICROELECTRONIC CIRCUITS; PHYSICAL PROPERTIES; RADIATION DETECTION; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SEMIMETALS; TEMPERATURE RANGE; TIMING PROPERTIES