Published 1989 | Version v1
Book Metadata-only

Analysis of double-heterostructure and quantum-well lasers using effective index techniques

Creators

  • 1. Southern Methodist Univ., Dallas, TX (USA)
  • 2. David Sarnoff Research Center, Princeton, NJ (USA)

Description

The effects of geometrical and compositional properties of semiconductor lasers are analyzed using the effective index method. The effective index method of analysis is explained by separating the two-dimensional wave equation into transverse and lateral differential equations. The near-and-far-field patterns show the effects of asymmetries when the optical fields have strong coupling to the lossy substrates. Emphasis is placed on channeled-substrate-planar lasers fabricated with aluminum gallium arsenide compounds

Additional details

Publishing Information

Publisher
Society of Photo-Optical Instrumentation Engineers.
Imprint Place
Bellingham, WA (USA)
ISBN
0-8194-0078-5
Imprint Title
Laser diode technology and applications
Imprint Pagination
vp.
Journal Page Range
p. 148-156.

Conference

Title
SPIE conference on optics, electro-optics and laser applications in science and engineering.
Acronym
OE/LASE '89
Dates
15-20 Jan 1989.
Place
Los Angeles, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
22005354
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ASYMMETRY; CHEMICAL COMPOSITION; DIFFERENTIAL EQUATIONS; FABRICATION; GALLIUM SELENIDES; GEOMETRY; HETEROJUNCTIONS; OPTICAL PROPERTIES; QUANTUM EFFICIENCY; SEMICONDUCTOR LASERS; SPECIFICATIONS; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
AMPLIFIERS; CHALCOGENIDES; EFFICIENCY; EQUATIONS; EQUIPMENT; GALLIUM COMPOUNDS; LASERS; MATHEMATICS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS

Optional Information

Secondary number(s)
CONF-890145--.