Published September 21, 2002 | Version v1
Journal article

Spin electronics - a review

  • 1. Spin Electronics Group, Clarendon Laboratory, Oxford (United Kingdom)

Description

An overview is given of the state of the art in spin electronics. The technical basis is reviewed and simple ideas of giant magnetoresistance discussed. The connection between spin electronics and mesomagnetism is explored. Three-terminal spin-electronic devices are introduced of various types including hot carrier and hybrid spin/semiconductor devices. Spin-tunnel devices are examined and single spin electronics is also treated. The paper concludes with an outlook on future prospects in this field. (author)

Availability note (English)

Available online at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
35
Journal Issue
18
Journal Page Range
p. R121-R155
ISSN
0022-3727

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
33048466
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHARGE CARRIERS; MAGNETORESISTANCE; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICES; SPIN; TUNNEL EFFECT
Descriptors DEC
ANGULAR MOMENTUM; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; PARTICLE PROPERTIES; PHYSICAL PROPERTIES