High p-type doping of ZnBeSe using a modified delta-doping technique with N and Te

High crystalline quality ZnBeSe epilayers were grown nearly lattice matched to GaAs (001) substrates by molecular beam epitaxy with a Be--Zn co-irradiation. A (1 x 2) reflection high energy electron diffraction pattern was observed after the Be--Zn co-irradiation of the GaAs (2 x 4) surface. A high p-type doping level of 1.5 x 1018cm-3 was achieved for (N+Te) triple-delta doping (delta3 doping) of ZnBeSe epilayers, whereby three adjacent delta layers of N and Te were deposited in each doping cycle. X-ray diffraction measurements reveal that (N+Te) delta3-doped ZnBeSe samples with a Te concentration of about 0.5% remain of very high crystalline quality with an X-ray rocking curve linewidth of 51 arcsec. Low temperature photoluminescence measurements show some emission peaks related to Te2 clusters and/or Ten≥3 clusters. copyright 2001 American Institute of Physics