Features of MDS-structures on the base of rare earth oxides prepared by chemical method

Presented are experimental investigations of r.e.e. oxide films and also complexes films of SiO2 r.e.e. oxide type in MDS-system (metal-dielectric-semiconductor). R.e.e. films are sprayed from the solutions of corresponding alcoholates in benzol or in n-hexan by a centrifugation method. It is shown that for films obtained by destruction of alcoholates a density of surface states is less significantly than those obtained from r.e.e. nitrates. It can be explained by higher purity of the oxides obtained from alcoholates and higher density of their structure. The increase of yttrium oxide content in a film brings to a dielectric constant increase and also to decrease of surface states. Calculated is the density of surface states along the semiconductor-oxide interface. Films, obtained by alcoholate destruction possess better properties