Temperature dependences of the charge losses in Si(Li) (p-i-n) detectors

The causes of charge losses in Si(Li)(p-i-n) detectors with working region thickness equal of 1 mm and area of 1.25 cm2 are studied. The dependences of the average charge losses from reverse drift velocity of nonequilibrium carrirs were measured. An analysis of the results obtained shows that at fields from 500 to 5000 Vxcm-1, carrier capture occurs preferentially in potential traps. The dependence of the average charge losses upon sample temperature was obtained to clarify the parameters of capture centres. The sample material was found to have two capture levels of nonequilibrium carriers, at T approximately equal to 111 and 147 K. An analysis of the calculation results for capture centre parameters has shown the second level (E2=0.16 eV) to be the A-centre; the first level (E1=0.14 eV) has a vacancy na. ture and is located in the upper half of the forbidden zone