Published 1976
| Version v1
Book
Induced acceptor levels and free-carrier mobility due to c--screw dislocations in tellurium
- 1. Lille-1 Univ., 59 - Villeneuve-d'Ascq (France)
Description
Experimental investigations of the influence of c-screw dislocations on the electronic properties of Te are reported. They show that such dislocations introduce an acceptor level inside the bandgap and strongly reduce the free-carrier mobility. Both effects are discussed with respect to three possible mechanisms: deformation potential, piezoelectric potential and core effects, and seem to originate only from the core effects. (author)
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- Bristol
- ISBN
- 0 85498 121 7
- Imprint Title
- Radiation effects in semiconductors, 1976. Invited and contributed papers from the international conference on radiation effects in semiconductors held in Dubrovnik, 6-9 September 1976
- Journal Issue
- no. 31
- Series
- Institute of Physics Conference Series.
- Journal Page Range
- p. 478-484.
- ISSN
- 0305-2346
Conference
- Title
- International conference on radiation effects in semiconductors.
- Dates
- 6 - 9 Sep 1976.
- Place
- Dubrovnik, Yugoslavia.
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 9370155
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BAND THEORY; CARRIER MOBILITY; DEFORMATION; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ENERGY LEVELS; HALL EFFECT; SCREW DISLOCATIONS; TELLURIUM
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS; ELECTRICAL PROPERTIES; ELEMENTS; LINE DEFECTS; MOBILITY; PHYSICAL PROPERTIES; SEMIMETALS