Published June 2005 | Version v1
Journal article

Soft-X-ray Raman scattering of La1-xSr xTiO3

  • 1. Department of Applied Physics, Tokyo University of Science, Tokyo 162-8601 (Japan)
  • 2. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
  • 3. Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan)
  • 4. RIKEN, Hyogo 679-5143 (Japan)
  • 5. Institute for Solid State Physics, University of Tokyo, Chiba 277-8581 (Japan)

Description

The electronic structure of doped Mott-insulator La1-xSr xTiO3 has been studied by resonant soft-X-ray emission spectroscopy (SXES). The Raman scattering of the eg- and t2g-resonant SXES spectra indicates features due to the d-d transitions corresponding to the crystal field splitting (10Dq) and half on-site Coulomb energy (U dd/2), respectively. The U dd does not change much around two metal-insulator transitions at x = 0.05 and 0.95 in La1-xSr xTiO3, while the 10Dq increases as a function of x. These results are in good agreement with the prediction of dynamical mean field theory calculation

Additional details

Identifiers

DOI
10.1016/j.elspec.2005.01.226;
PII
S0368-2048(05)00288-4;

Publishing Information

Journal Title
Journal of Electron Spectroscopy and Related Phenomena
Journal Volume
144-147
Journal Page Range
p. 853-856
ISSN
0368-2048
CODEN
JESRAW

Conference

Title
14. international conference on vacuum ultraviolet radiation physics
Acronym
VUV 14
Dates
19-23 Jul 2004
Place
Cairns (Australia)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.