Quaternary AlInGaN/InGaN quantum well on vicinal c-plane substrate for high emission intensity of green wavelengths
Creators
- 1. Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongbuk 712-702 (Korea, Republic of)
- 2. Advanced Institutes of Convergence Technology, Seoul National University, Suwon (Korea, Republic of)
- 3. Department of Mechanical Engineering, Ajou University, Suwon (Korea, Republic of)
- 4. CAE Group, Platform Technology Lab, Samsung Advanced Institute of Technology, Samsung Street 130, Suwon, Kyeonggi-Do 443-803 (Korea, Republic of)
Description
Electronic and optical properties of non-trivial semipolar AlInGaN/InGaN quantum well (QW) structures are investigated by using the multiband effective-mass theory and non-Markovian optical model. On vicinal c-plane GaN substrate miscut by a small angle (θ < 40°) from c-plane, the AlInGaN/InGaN system is shown to have ∼3 times larger spontaneous emission peak intensity than the conventional InGaN/GaN system at green wavelength. It is attributed to much larger optical matrix element of the quaternary AlInGaN/InGaN system, derived from the reduction of internal electric field induced by polarizations. This effect exceeds the performance-degrading factor of smaller quasi-Fermi-level separation for the quaternary AlInGaN/InGaN system than that for the conventional InGaN/GaN system. Results indicate that the use of quaternary III-nitride QWs on vicinal substrates may be beneficial in improving the performance of optical devices emitting green light
Additional details
Identifiers
- DOI
- 10.1063/1.4920995;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 117
- Journal Issue
- 18
- Journal Page Range
- p. 185707-185707.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46116062
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ELECTRIC FIELDS; ELECTRONIC STRUCTURE; FERMI LEVEL; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; MARKOV PROCESS; MATRIX ELEMENTS; OPTICAL MODELS; OPTICAL PROPERTIES; PERFORMANCE; POLARIZATION; QUANTUM WELLS; SUBSTRATES; VISIBLE RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ENERGY LEVELS; GALLIUM COMPOUNDS; MATHEMATICAL MODELS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SEMICONDUCTOR JUNCTIONS; STOCHASTIC PROCESSES
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC