Published February 5, 1992 | Version v1
Journal article Metadata-only

GaAs solid state detectors for high energy physics

Creators

  • 1. Dept. of Physics, University of Sheffield (United Kingdom)
  • 2. Dept. of Electrical and Electronic Engineering, University of Glasgow (United Kingdom)
  • 3. 2-CERN, Geneva (Switzerland)
  • 4. Dipartimento di Fisica dell'Universita and INFN Bologna (Italy)
  • 5. Dipartimento di Fisica dell'Universita and INFN Florence (Italy)
  • 6. Rutherford-Appleton Laboratory, Chilton, Didcot, Oxon. (United Kingdom)
  • 7. University of Lancaster (United Kingdom)
  • 8. Dept. of Electrical and Electronic Engineering, University of Sheffield (United Kingdom)
  • 9. Dept. of Physics and Astronomy, University of Glasgow (United Kingdom)

Description

Progress in the development of detectors based on semi-insulating GaAs for experiments at future hadron colliders is presented. Effects of neutron and gamma irradiation at the levels of 1014 ncm-2 and 20 MRad respectively, have been shown to be small. Testbeam studies have shown that microstrip detectors can detect minimum ionizing particles with a good signal to noise ratio despite having low charge collection efficiencies. The problem of charge loss in the detectors is now better understood and new detectors have shown improved charge collection efficiencies

Additional details

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
272
Journal Issue
2
Journal Page Range
p. 1709-1713.
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
26. International Union of Pure and Applied Physics (IUPAP) conference on high energy physics (ICHEP-26).
Dates
6-12 Aug 1992.
Place
Dallas, TX (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
26041837
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S43: PARTICLE ACCELERATORS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COLLIDING BEAMS; GALLIUM ARSENIDES; GAMMA RADIATION; GAUSSIAN PROCESSES; HADRON-HADRON INTERACTIONS; NEUTRONS; RADIATION DETECTORS; RADIATION HARDENING; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SIGNAL-TO-NOISE RATIO
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BARYONS; BEAMS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HADRONS; HARDENING; INTERACTIONS; IONIZING RADIATIONS; MEASURING INSTRUMENTS; NUCLEONS; PARTICLE INTERACTIONS; PHYSICAL RADIATION EFFECTS; PNICTIDES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DIODES

Optional Information

Secondary number(s)
CONF-920837--.