Photoluminescence at wavelength 1.54 μm in an erbium-doped amorphous hydrogenated silicon

The temperature dependence of photoluminescence has been studied on a-Si : H samples with Er and oxygen introduced during growth. In contrast to single-crystal Si where the intensity of Er photoluminescence markedly decreases when temperature is elevated from 4.2 K to room temperature, the Er photoluminescence in a-Si : H is practically temperature independent. 14 refs., 6 figs