Published 2005
| Version v1
Miscellaneous
Comparison of the structural properties obtained by XANES of PECVD SiOxNy dielectric layer with the Si/ SiOxNy interface electrical properties
Description
no abstract available
Additional details
Additional titles
- Original title (English)
- 15. Reuniao anual de usuarios do LNLS - Resumos
Publishing Information
- Imprint Title
- 15. Annual meeting of the LNLS users - Abstracts
- Imprint Pagination
- [340 p.]
- Journal Page Range
- [1 p.]
Conference
- Title
- 15. Annual meeting of the LNLS users
- Original Conference Title
- 15. Reuniao anual de usuarios do LNLS
- Dates
- 21-22 Feb 2005
- Place
- Campinas, SP (Brazil)
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 37105255
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; BRAZILIAN LNLS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRICAL PROPERTIES; FILMS; LNLS STORAGE RING; SILICON COMPOUNDS; SYNCHROTRON RADIATION; X-RAY SPECTROSCOPY
- Descriptors DEC
- BRAZILIAN ORGANIZATIONS; BREMSSTRAHLUNG; CHEMICAL COATING; DEPOSITION; ELECTROMAGNETIC RADIATION; MATERIALS; NATIONAL ORGANIZATIONS; PHYSICAL PROPERTIES; RADIATION SOURCES; RADIATIONS; SPECTROSCOPY; STORAGE RINGS; SURFACE COATING; SYNCHROTRON RADIATION SOURCES
Optional Information
- Notes
- 3 refs.; Part III-36 Imprint:15. Reuniao anual de usuarios do LNLS - Resumos