Sheath voltage ratio for asymmetric RF discharges
- 1. California Univ., Berkeley, CA (USA)
Description
Spherical and cylindrical many-particle models are being used to simulate RF discharges in which the RF powered and the grounded electrodes have different areas. This asymmetry determines the magnitude of the self-bias voltage Va (the ion bombarding energy) at the powered electrode, which is a critical process parameter. Recent analytical models for the sheath voltage ratio including the effect of the floating potential have been developed that agree with some experimental results. One dimensional (radial) spherical shell models have also been developed, incorporating various assumptions for the sheath and the glow discharges, leading to a scaling which is in agreement with some measurements. The authors simulated the spherical model with a non uniform ionization and the results agree with the theory. The cylindrical simulation shows that the floating potential plays an important role. The simulation results will be given graphically as the sheath voltage ratio versus area ratio, and will be compared with the theory. The simulation codes are PDC1 (cylindrical) and PDS1 (spherical) which utilize particle-in-cell techniques plus Monte-Carlo simulation of electron-neutral (elastic, excitation and ionization) and ion-neutral (scattering and charge-exchange) collisions
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- 1990 IEEE international conference on plasma science-Conference Record-Abstracts
- Imprint Pagination
- 231 p.
- Journal Page Range
- p. 184.
Conference
- Title
- 17. IEEE international conference on plasma science (ICOPS 17).
- Dates
- 21-23 May 1990.
- Place
- Oakland, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22057385
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ASYMMETRY; COMPUTER CODES; ELASTIC SCATTERING; ELECTRIC POTENTIAL; ELECTRON-ATOM COLLISIONS; EXCITATION; HIGH-FREQUENCY DISCHARGES; ION IMPLANTATION; ION-ATOM COLLISIONS; IONIZATION; MONTE CARLO METHOD; PLASMA SHEATH; SCALING LAWS; SIMULATION
- Descriptors DEC
- ATOM COLLISIONS; COLLISIONS; ELECTRIC DISCHARGES; ELECTRON COLLISIONS; ENERGY-LEVEL TRANSITIONS; ION COLLISIONS; SCATTERING
Optional Information
- Secondary number(s)
- CONF-900585--.