Published 1971
| Version v1
Book
Concentration profiles and enhanced diffusion in ion-implanted silicon studied by radioactivation analysis
Creators
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Inst. of Electrical and Electronics Engineers, Inc.
- Imprint Place
- New York
- Imprint Title
- Record of the 11th Symposium on Electron, Ion, and Laser Beam Technology
- Imprint Pagination
- p. 103-110.
Conference
- Title
- 11. symposium on electron, ion, and laser beam technology.
- Dates
- 12 May 1971.
- Place
- Boulder, Colo.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 4041355
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ANALYSIS; ANTIMONY IONS; DIFFUSION; DISTRIBUTION; INDIUM IONS; MONOCRYSTALS; RADIOACTIVATION; SILICON
- Descriptors DEC
- CHARGED PARTICLES; CHEMICAL ANALYSIS; CRYSTALS; ELEMENTS; IONS; SEMIMETALS