Published 1985 | Version v1
Report

Regrowth and compound formation by pulsed ion beams

  • 1. Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science and Engineering

Description

Experiments using pulsed protons or beams of heavier ions are described and reviewed. Ion pulses were produced by magnetically insulated diodes driven by Marx bank generators. The quality of the beam has also been analyzed showing appreciable proportions of impurities (carbon, oxygen, metals). Implantation amorphized layers were recrystallized by LPE mechanisms. Surface layers of amorphous metals were modified. Formation of silicides was demonstrated. Heavier ion pulses increase temperature gradients, thus give higher regrowth rates. Advantages and disadvantages of the technique are analyzed. (author)

Additional details

Publishing Information

Imprint Title
Energy pulse modification of semiconductors and related materials
Imprint Pagination
386 p.
Journal Page Range
p. 95-105.
Report number
ZfK--555

Conference

Title
Conference on energy pulse modification of semiconductors and related materials.
Dates
25-28 Sep 1984.
Place
Dresden (German Democratic Republic).