Geant4 simulation of contribution of nuclear reaction to single event upset

Single event upset (SEU) effect in semiconductor devices and integrated circuits (IC) was simulated using Geant4. General structure and simulation method were established to study SEU effect accurately. Ionization and nuclear reaction mechanisms were used to generate statistical profiles of charge deposition in sensitive volume of semiconductor devices and ICs. The results showed that the device structure with a tungsten layer above the sensitive volume could be more likely to cause an SEU. (authors)