Decreasing reverse recovery time of a silicon epitaxial high current switching diode by electron irradiation

The reverse recovery time of a silicon epitaxial high current diode with p+ nn+ type is substantially reduced by irradiation with 1.2 MeV electons, while the forward voltage drop of the device is maintained within nominal ranges. The device is irradiated by electrons at room temprature. The electron flux is most desirably about 3 ∼ 5 x 1014 e/cm2. The electrical characteristics of the device were measured before and after irradiation. The irradiated devices sealed with the cap were stored at 150 deg C and were tested electrically for a period of 240 hours. The irradiated devices have good characteristics. Now the process technology has been introduced into production