SrLaGaO4-SrLaAlO4 solid solutions: new promising substrate materials for HTSc

Different substrate materials with K2NiF4 structure for HTSc epitaxy have been compared with the best substrate materials with perovskite structure. The growth of SrLaGaO4 and SrLaAlO4 crystals, as well as their solid solutions on left angle 100 right angle and left angle 001 right angle oriented seeds, has been investigated. The optimal conditions for crystal growth occurred when the active afterheater was applied to decrease the vertical temperature gradient. The optimum starting compositions for crystal growth of SrLaGaO4-SrLaAlO4 solid solutions have been found. The single crystals of SrLaAl1-xGaxO4, obtained up to now enabled preparation of substrates with lattice constant a in the range 0.3754-0.3774 nm, while the SrLaGa1-xAlxO4 crystals are good for substrates with lattice constant in the range 0.3843-0.3826 nm. (orig.)