Frequency-dependent capacitance-voltage and conductance-voltage characteristics of low-dielectric-constant SiOC(-H) thin films deposited by using plasma-enhanced chemical vapor deposition

We report on the electrical characteristics of the metal-insulator-semiconductor (MIS) structure of low-dielectric-constant SiOC(-H) films. SiOC(-H) thin films were deposited on p-Si(100) substrates by using a plasma-enhanced chemical vapor deposition (PECVD) system. The frequency dependence of the capacitance-voltage (C-V) and the conductance-voltage (G/ω-V) characteristics of the A1/SiOC(-H)/p-Si(100)/Al MIS structures was analyzed. C-V and G/ω-V measurements were carried out over a frequency range of 1 kHz to 5 MHz. Based on our analysis, the C-V and the G/ω-V characteristics confirmed that the surface states and the series resistance were important parameters that strongly influenced the electrical properties of the A1/SiOC(-H)/p-Si(100)/Al MIS structures.