Published December 1987
| Version v1
Journal article
A novel CMOS SRAM feedback element for SEU environments
Creators
- 1. Electrical and Computer Engineering Dept., North Carolina State Univ., Raleigh, NC (USA)
Description
A hardened CMOS SRAM has been proposed which utilizes a leaky polysilicon Schottky diode placed in the feedback path to attain the SEU immunity of resistor-coupled SRAMs while improving the access speed of the cell. Novel polysilicon hybrid Schottky-resistor structures which emulate the leaky diodes have been designed and fabricated. The elements' design criteria and methods of fulfilling them are presented along with a practical implementation scheme for CMOS SRAM cells
Additional details
Publishing Information
- Journal Title
- IEEE Trans. Nucl. Sci.
- Journal Volume
- NS-34
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 1641-1646
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- Annual conference on nuclear and space radiation effects.
- Dates
- 28-31 Jul 1987.
- Place
- Snowmass Village, CO (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19091113
- Subject category
- S73: NUCLEAR PHYSICS AND RADIATION PHYSICS; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- FABRICATION; MOS TRANSISTORS; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SILICON; SPECIFICATIONS
- Descriptors DEC
- ELEMENTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; TESTING; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-8707112--.