Published December 15, 2009 | Version v1
Journal article

Hydrogen in ZnO

Creators

  • 1. Technische Universitaet Dresden, 01062 Dresden (Germany)

Description

The results of a combined study of Raman scattering, IR absorption, photoluminescence, and photoconductivity on ZnO are presented. Two shallow donors-hydrogen at the bond-centered lattice site, HBC, and hydrogen bound in an oxygen vacancy, HO-were identified. Donor HBC has an ionization energy of 53 meV. The recombination of an exciton bound to HBC gives rise to the 3360.1±0.2meV photoluminescence line. The 1s→2p donor transition at 330cm-1 is detected in the Raman scattering and photoconductivity spectra. The stretch mode of the associated O-H bond is detected in IR absorption at 3611cm-1. The HO donor in ZnO has an ionization energy of 47 meV. The excitonic recombination at HO leads to the previously labeled I4 line at 3362.8 meV. Photoconductivity and Raman spectra reveal the 1s→2p donor transition at 265cm-1. It is shown that HBC migrating through the ZnO lattice forms electrically inactive interstitial H2. Vibrational modes of H2, HD, and D2 were identified at 4145, 3628, and 2985cm-1, respectively. These results suggest that interstitial H2 is responsible for the 'hidden' hydrogen in ZnO.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2009.08.250

Additional details

Identifiers

DOI
10.1016/j.physb.2009.08.250;
PII
S0921-4526(09)01010-2;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
404
Journal Issue
23-24
Journal Page Range
p. 5075-5079
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
25. international conference on defects in semiconductors
Dates
20-24 Jul 2009
Place
St. Petersburg (Russian Federation)

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.