Hydrogen in ZnO
Description
The results of a combined study of Raman scattering, IR absorption, photoluminescence, and photoconductivity on ZnO are presented. Two shallow donors-hydrogen at the bond-centered lattice site, HBC, and hydrogen bound in an oxygen vacancy, HO-were identified. Donor HBC has an ionization energy of 53 meV. The recombination of an exciton bound to HBC gives rise to the 3360.1±0.2meV photoluminescence line. The 1s→2p donor transition at 330cm-1 is detected in the Raman scattering and photoconductivity spectra. The stretch mode of the associated O-H bond is detected in IR absorption at 3611cm-1. The HO donor in ZnO has an ionization energy of 47 meV. The excitonic recombination at HO leads to the previously labeled I4 line at 3362.8 meV. Photoconductivity and Raman spectra reveal the 1s→2p donor transition at 265cm-1. It is shown that HBC migrating through the ZnO lattice forms electrically inactive interstitial H2. Vibrational modes of H2, HD, and D2 were identified at 4145, 3628, and 2985cm-1, respectively. These results suggest that interstitial H2 is responsible for the 'hidden' hydrogen in ZnO.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2009.08.250Additional details
Identifiers
- DOI
- 10.1016/j.physb.2009.08.250;
- PII
- S0921-4526(09)01010-2;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 404
- Journal Issue
- 23-24
- Journal Page Range
- p. 5075-5079
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 25. international conference on defects in semiconductors
- Dates
- 20-24 Jul 2009
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41089738
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; HYDROGEN ADDITIONS; HYDROGEN COMPLEXES; INFRARED SPECTRA; INTERSTITIALS; IONIZATION; MOLECULES; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; RAMAN EFFECT; RAMAN SPECTRA; RECOMBINATION; VACANCIES; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COMPLEXES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EMISSION; LUMINESCENCE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; POINT DEFECTS; SORPTION; SPECTRA; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.