Frozen-in vacancies in PVD-Cu films with improved high-pressure reflowability studied using a slow positron beam

Recently, a new process has been proposed for fabricating a LSI interconnection; filling trenches and via holes with Cu using high-pressure annealing treatment. It is already known that a Cu film produced by physical vapor deposition (PVD) has a lower reflowability compared to a Cu film produced by electrochemical deposition (ECD). Additionally, it has also been recognized that the addition of Sb to the PVD-Cu film improves the reflowability. However, the factors responsible for the reflowability of Cu films have not yet been studied. In this work, we evaluated a PVD pure-Cu film and a PVD Cu-0.5at%Sb film by using a slow positron beam. Addition of Sb led to the introduction of lattice defects in the as-deposited film. These defects that were observed in the PVD-CuSb dilute alloy film were identified as frozen-in vacancies that were produced during deposition.