Published October 2018 | Version v1
Journal article

Electrical transport properties and complex impedance investigation of Fe3+ and La3+ co-doping (Pb,Sr)TiO3 thin films

  • 1. Department of Chemistry, Universidade Estadual Paulista – Unesp, P.O. Box 473, 17033-360 Bauru, São Paulo (Brazil)
  • 2. NanO LaB – Department of Physics, Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil)
  • 3. Physics Institute of São Carlos (IFSC), Universidade de São Paulo, São Carlos, SP (Brazil)
  • 4. LIEC – CDMF – Department of Chemistry, Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil)

Description

Highlights: • The influence of Fe3+ and La3+ incorporation on properties of PST has been analyzed carefully. • The electrical transport properties have been investigated. • The impedance spectroscopy shows dielectric relaxation phenomenon. • Increase in conduction to be directly related to a decrease in the Schottky barrier height. - Abstract: This work investigates the impact of Fe3+ and La3+ co-doping on the structural, electrical transport and dielectric relaxation properties of PST thin films. XRD and Raman spectroscopy data show that the Fe3+ and La3+ doping induce a pseudocubic to tetragonal structural phase transformation. Schottky barrier heights calculated from temperature-dependent current–voltage plots for the PST, PSTF and PSLTF films decreased to 1.20, 0.59, and 0.36 eV, respectively. This behavior was directly assigned to the increase in oxygen vacancies. The frequency dependence of sample's impedance revealed the presence of the typical electrical relaxation phenomenon in all films. Activation energies calculated from the imaginary part of the impedance are 1.73 and 0.57 eV: the high value (1.73 eV, PST films) suggests the presence of long-range oxygen vacancy diffusion, while the lower one (0.57 eV PSLTF films) should be associated to the short-range oxygen vacancy diffusion.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.mseb.2018.11.013

Additional details

Identifiers

DOI
10.1016/j.mseb.2018.11.013;
PII
S0921510718300710;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
236-237
Journal Page Range
p. 179-188
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.