Electrical transport properties and complex impedance investigation of Fe3+ and La3+ co-doping (Pb,Sr)TiO3 thin films
Creators
- 1. Department of Chemistry, Universidade Estadual Paulista – Unesp, P.O. Box 473, 17033-360 Bauru, São Paulo (Brazil)
- 2. NanO LaB – Department of Physics, Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil)
- 3. Physics Institute of São Carlos (IFSC), Universidade de São Paulo, São Carlos, SP (Brazil)
- 4. LIEC – CDMF – Department of Chemistry, Universidade Federal de São Carlos, Via Washington Luiz, Km 235, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil)
Description
Highlights: • The influence of Fe3+ and La3+ incorporation on properties of PST has been analyzed carefully. • The electrical transport properties have been investigated. • The impedance spectroscopy shows dielectric relaxation phenomenon. • Increase in conduction to be directly related to a decrease in the Schottky barrier height. - Abstract: This work investigates the impact of Fe3+ and La3+ co-doping on the structural, electrical transport and dielectric relaxation properties of PST thin films. XRD and Raman spectroscopy data show that the Fe3+ and La3+ doping induce a pseudocubic to tetragonal structural phase transformation. Schottky barrier heights calculated from temperature-dependent current–voltage plots for the PST, PSTF and PSLTF films decreased to 1.20, 0.59, and 0.36 eV, respectively. This behavior was directly assigned to the increase in oxygen vacancies. The frequency dependence of sample's impedance revealed the presence of the typical electrical relaxation phenomenon in all films. Activation energies calculated from the imaginary part of the impedance are 1.73 and 0.57 eV: the high value (1.73 eV, PST films) suggests the presence of long-range oxygen vacancy diffusion, while the lower one (0.57 eV PSLTF films) should be associated to the short-range oxygen vacancy diffusion.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2018.11.013Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2018.11.013;
- PII
- S0921510718300710;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 236-237
- Journal Page Range
- p. 179-188
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50038338
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; IMPEDANCE; IRON IONS; LANTHANUM IONS; LEAD COMPOUNDS; OXYGEN; RAMAN SPECTROSCOPY; SCHOTTKY EFFECT; STRONTIUM TITANATES; THIN FILMS; VACANCIES; X-RAY DIFFRACTION
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CURRENTS; DIFFRACTION; ELEMENTS; ENERGY; FILMS; IONS; LASER SPECTROSCOPY; MATERIALS; NONMETALS; OXYGEN COMPOUNDS; POINT DEFECTS; SCATTERING; SPECTROSCOPY; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.