Electrophysical properties of the compounds of CdMIn2O5, CdM'InO4, CdBaIn4O8 composition and solid solutions on their basis

Temperature dependences of specific volumetric resistance (Ρv) and dielectric permittivity of complex oxides of the composition CdMIn2O5, CdM'InO4, CdBaIn4O8, where M, M'-Sc, Ga, Zn, Mg, Cu, Al and CdM1-xIn2O5-x, CdMx'In2-xO4 solid solutions, have been studied. Wide ranges of compositions (on the basis of CdCuIn2O5 and CdIn2O4) with low Ρv values (10-4-10-1 Ohmxcm) and conductivity activation energy (0.01-0.1 eV) are singled out. For the rest compounds and solid solutions Ρv is within 101-1010 Ohmxcm, which decreases to 2-4 Ohmxcm with the temperature increase to 650 deg C